发明名称 |
Multilayered dual bit memory device with improved write/erase characteristics and method of manufacturing |
摘要 |
A dual bit ROM multilayered structure with improved write and erase functions and a method of manufacturing is disclosed. The structure includes a pair of floating gates at the middle or nitride layer to better define the two locations of electrons representing the dual data bits collected in the middle layer.
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申请公布号 |
US2005116281(A1) |
申请公布日期 |
2005.06.02 |
申请号 |
US20030725234 |
申请日期 |
2003.12.01 |
申请人 |
YANG CHIN-TIEN;LIN MU-YI;TSENG YU-WEI;CAO MIN;LEE YU-HUA |
发明人 |
YANG CHIN-TIEN;LIN MU-YI;TSENG YU-WEI;CAO MIN;LEE YU-HUA |
分类号 |
G11C16/04;H01L21/28;H01L21/8246;H01L21/8247;H01L27/115;H01L29/792;(IPC1-7):H01L29/792;H01L21/823 |
主分类号 |
G11C16/04 |
代理机构 |
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