| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma processing method enhancing plasma processing characteristics, reproducibility of the plasma processing characteristics, and reducing plasma processing cost by stably achieving matching adjustment of high frequency power in the plasma processing method for processing a workpiece set in a reaction vessel by introducing a plurality of high frequency powers having different frequencies into the reaction vessel and decomposing raw gas in the reaction vessel, and to provide a plasma processing apparatus. <P>SOLUTION: Inductance L1 from the output end of the last stage impedance element of a matching circuit for high frequency power having the highest frequency to a power synthesizing point and inductance L2 from the output end of the last stage impedance element of the matching circuit for high frequency power having the lowest frequency to the power synthesizing point are set so as to be 2.0×L1≤L2. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
