| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve the problem that pixel characteristics are deteriorated since the area of the activated region of a photoelectric conversion element becomes small when a region for making well contact at every pixel and the photoelectric conversion element are formed in the different activated regions. <P>SOLUTION: In a solid-state image pickup device in a configuration where well contact is made at every pixel, a well contact region 55 for fixing a well where the photoelectric conversion element 21 of the pixel 20 and transistors 22 to 25 are formed to be constant potential is formed in the activated region 42 which is the same as the photoelectric conversion element 21. Thus, a part required for an element separation region in a conventional case is allocated to the activated region 42 of the photoelectric conversion element 21. The deterioration of the pixel characteristics, which occurs by installing the well contact region 55, is suppressed to the minimum. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
