| 摘要 |
PROBLEM TO BE SOLVED: To realize a metal resistor which can be formed in the latter half of the process of a semiconductor in addition to a polysilicon resistor formed in the first half of the process as the resistor on the semiconductor substrate. SOLUTION: A capacitor 27 is formed by providing a lower electrode 14, a capacitance insulating film 16, and an upper electrode 17 in this order. Even in a resistor structure 28 of MIM structure, a lower electrode 15, the capacitance insulating film 16, and a resistor 18 are provided in this order. In this case, bias conditions are set so as to make the lower electrode 15 of the resistor structure of MIM structure resistor 28 in a floating state without connecting any potentials. Therefore, even when a signal of a high frequency is impressed to the metal resistor 18, the high frequency characteristic of the device mounted with the metal resistor is good since it is hardly affected by parasitic capacitance because the lower electrode 15 of the resistor structure is put into the floating state. COPYRIGHT: (C)2005,JPO&NCIPI
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