Schottky-barrier MOSFET manufacturing method using isotropic etch process

摘要

A method of fabricating a transistor device for regulating the flow of electric current is provided wherein the device has Schottky-barrier metal source-drain contacts. The method, in one embodiment, utilizes an isotropic etch process prior to the formation of the metal source-drain contacts to provide better control of the Schottky-barrier junction location to a channel region. The improvements from the controllability of the placement of the Schottky-barrier junction enables additional drive current and optimizes device performance, thereby significantly improving manufacturability.