DESIGN AND FABRICATION OF 6.1- Å FAMILY SEMICONDUCTOR DEVICES USING SEMI-INSULATING AlSb SUBSTRATE

摘要

For the first time, an aluminum antimonide (AlSb) single crystal substrate is utilized to lattice-match to overlying semiconductor layers. The A1Sb substrate establishes a new design and fabrication approach to construct high-speed, low-power electronic devices while establishing inter-device isolation. Such lattice matching between the substrate and overlying semiconductor layers minimizes the formation of defects, such as threaded dislocations, which can decrease the production yield and operational life-time of 6.1-Å family heterostructure devices.