发明名称 |
Forming gate oxides having multiple thicknesses |
摘要 |
Gate oxides having different thicknesses are formed on a semiconductor substrate by forming a first gate oxide on the top surface of the substrate, forming a sacrificial hard mask over a selected area of the first gate oxide; and then forming a second gate oxide. A first poly layer may be formed on the first gate oxide, under the hard mask. After the hard mask is removed, a second poly layer may be formed over the second gate oxide and over the first poly layer. This enables the use of high-k dielectric materials, and the first gate oxide can be thinner than the second gate oxide.
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申请公布号 |
US2005118764(A1) |
申请公布日期 |
2005.06.02 |
申请号 |
US20030724483 |
申请日期 |
2003.11.28 |
申请人 |
CHOU ANTHONY I.;CHUDZIK MICHAEL P.;FURUKAWA TOSHIHARU;GLUSCHENKOV OLEG;KIRSCH PAUL D.;LEE BYOUNG H.;ONISHI KATSUNORI;PARK HEEMYOUNG;SCHEER KRISTEN C.;SEKIGUCHI AKIHISA |
发明人 |
CHOU ANTHONY I.;CHUDZIK MICHAEL P.;FURUKAWA TOSHIHARU;GLUSCHENKOV OLEG;KIRSCH PAUL D.;LEE BYOUNG H.;ONISHI KATSUNORI;PARK HEEMYOUNG;SCHEER KRISTEN C.;SEKIGUCHI AKIHISA |
分类号 |
H01L21/8234;H01L21/8238;(IPC1-7):H01L21/00;H01L21/320;H01L21/336;H01L21/823;H01L21/84 |
主分类号 |
H01L21/8234 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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