发明名称 Enhancing SNR and throughput performance of integrated circuits
摘要 Low voltage transistors are used in high voltage environment. The low voltage transistors may be used in the path of processing of a signal to increase the throughput performance. By using high voltage supply associated with the high voltage environment, a higher SNR may be attained. Various techniques are implemented to ensure that the low voltage transistors are not damaged by prolonged exposure to high voltages.
申请公布号 US2005116760(A1) 申请公布日期 2005.06.02
申请号 US20030724517 申请日期 2003.11.29
申请人 TEXAS INSTRUMENTS INCORPORATED 发明人 UDUPA ANAND H.;PENTAKOTA VISVESVARAYA A.;RATH SHAKTI S.;NANDI GAUTAM S.;MISHRA VINEET;AYYAGARI RAVISHANKAR S.;AGARWAL NITIN
分类号 H03F1/26;H03F3/45;H03F3/72;H03L5/00;(IPC1-7):H03L5/00 主分类号 H03F1/26
代理机构 代理人
主权项
地址