发明名称 |
Enhancing SNR and throughput performance of integrated circuits |
摘要 |
Low voltage transistors are used in high voltage environment. The low voltage transistors may be used in the path of processing of a signal to increase the throughput performance. By using high voltage supply associated with the high voltage environment, a higher SNR may be attained. Various techniques are implemented to ensure that the low voltage transistors are not damaged by prolonged exposure to high voltages.
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申请公布号 |
US2005116760(A1) |
申请公布日期 |
2005.06.02 |
申请号 |
US20030724517 |
申请日期 |
2003.11.29 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
UDUPA ANAND H.;PENTAKOTA VISVESVARAYA A.;RATH SHAKTI S.;NANDI GAUTAM S.;MISHRA VINEET;AYYAGARI RAVISHANKAR S.;AGARWAL NITIN |
分类号 |
H03F1/26;H03F3/45;H03F3/72;H03L5/00;(IPC1-7):H03L5/00 |
主分类号 |
H03F1/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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