| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor storage device, its driving method, and a manufacturing method by which manufacturing processes can be easily performed, high integration can be achieved, characteristics can be stabilized even when writing, reading and erasing are repeated, and an occupied area can be reduced so as to allow the device to suit high performance. SOLUTION: The semiconductor storage device comprises a charge holding film (4) provided with a plurality of dielectric films (4-1, 4-2, 4-3) laminated on a semiconductor substrate (1); a memory gate electrode (5) formed on the semiconductor substrate (1) through the charge holding film (4); sidewall gate electrodes (7a, 7b) insulated from the memory gate electrode (5) by an insulating film (6) on both the side faces of the memory gate electrode (5); and a first bit line diffusion area (2) and a second bit line diffusion area (3) which are respectively adjacent to the sidewall gate electrodes (7a, 7b) in the semiconductor substrate (1). COPYRIGHT: (C)2005,JPO&NCIPI
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