MANUFACTURING METHOD FOR SEMICONDUCTOR LAYER, MANUFACTURING METHOD FOR PHOTOVOLTAIC ELEMENT, AND MANUFACTURING DEVICE FOR THE SEMICONDUCTOR LAYER

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method for a semiconductor layer by which a satisfactory and large area semiconductor layer can be deposited at a high speed.

SOLUTION: The manufacturing method for the semiconductor layer consists of a step of introducing a material gas inside a plurality of electric discharge chambers, a step of discharging the material gas by applying high frequency electric power and resolving it, and a step of making a substrate pass the respective electric discharge chambers one by one and forming a plurality of semiconductor layers on the substrate. VHF (Very High Frequency) electric power is applied to two or more electric discharge chambers of the plurality of the electric discharge chambers, wherein mutually different bias electric power is applied to each electric discharge chamber according to each depositing condition and a potential of each electrode applying the bias electric power is chosen to be the same as that of the substrate or positive.

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