| 摘要 |
<p>An image sensor is provided that can be made compact, low power consuming, and operative at high speed without degrading image quality and read-out speed. The image sensor includes a pixel cell having a photo diode 31 and a reset transistor 32 connected to a power supply, a detection transistor 33 for detecting the signal voltage of the photo diode 31, a selection transistor 34 for selecting the detection transistor 33 and reading the signal voltage therefrom; a peripheral circuit 12 having MOS transistors; and an input/output circuit 13 having MOS transistors. The gate dielectric films 60A of the reset transistor 32 and the detection transistor 33 are formed thicker than the gate dielectric film of the selection transistor 34. <IMAGE></p> |
