Multilayer integrated circuit copper plateable barriers

摘要

A trench ( 70 ) is formed in a dielectric layer ( 20 ). A first metal layer ( 80 ) is formed in the trench using physical vapor deposition. A second metal layer ( 100 ) is formed in the trench ( 70 ) over the first metal layer ( 80 ) using chemical vapor deposition. Copper ( 110 ) is used to fill the trench ( 70 ) by electroplating copper directly onto the second metal ( 100 ).