发明名称 Method of synthesis of hafnium nitrate for HfO2 thin film deposition via ALCVD process
摘要 A method of preparing a hafnium nitrate thin film includes placing phosphorus pentoxide in a first vessel; connecting the first vessel to a second vessel containing hafnium tetrachloride; cooling the second vessel with liquid nitrogen; dropping fuming nitric acid into the first vessel producing N<SUB>2</SUB>O<SUB>5 </SUB>gas; allowing the N<SUB>2</SUB>O<SUB>5 </SUB>gas to enter the second vessel; heating the first vessel until the reaction is substantially complete; disconnecting the two vessels; removing the second vessel from the liquid nitrogen bath; heating the second vessel; refluxing the contents of the second vessel; drying the compound in the second vessel by dynamic pumping; purifying the compound in the second vessel by sublimation to form Hf(NO<SUB>3</SUB>)<SUB>4</SUB>, and heating the Hf(NO<SUB>3</SUB>)<SUB>4 </SUB>to produce HfO<SUB>2 </SUB>for use in an ALCVD process.
申请公布号 US6899858(B2) 申请公布日期 2005.05.31
申请号 US20030350641 申请日期 2003.01.23
申请人 SHARP LABORATORIES OF AMERICA, INC. 发明人 ZHUANG WEI-WEI;EVANS DAVID R.;HSU SHENG TENG
分类号 C01G27/00;C01G27/02;C23C16/40;H01L21/316;(IPC1-7):C01B21/48 主分类号 C01G27/00
代理机构 代理人
主权项
地址