发明名称 |
Method of synthesis of hafnium nitrate for HfO2 thin film deposition via ALCVD process |
摘要 |
A method of preparing a hafnium nitrate thin film includes placing phosphorus pentoxide in a first vessel; connecting the first vessel to a second vessel containing hafnium tetrachloride; cooling the second vessel with liquid nitrogen; dropping fuming nitric acid into the first vessel producing N<SUB>2</SUB>O<SUB>5 </SUB>gas; allowing the N<SUB>2</SUB>O<SUB>5 </SUB>gas to enter the second vessel; heating the first vessel until the reaction is substantially complete; disconnecting the two vessels; removing the second vessel from the liquid nitrogen bath; heating the second vessel; refluxing the contents of the second vessel; drying the compound in the second vessel by dynamic pumping; purifying the compound in the second vessel by sublimation to form Hf(NO<SUB>3</SUB>)<SUB>4</SUB>, and heating the Hf(NO<SUB>3</SUB>)<SUB>4 </SUB>to produce HfO<SUB>2 </SUB>for use in an ALCVD process.
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申请公布号 |
US6899858(B2) |
申请公布日期 |
2005.05.31 |
申请号 |
US20030350641 |
申请日期 |
2003.01.23 |
申请人 |
SHARP LABORATORIES OF AMERICA, INC. |
发明人 |
ZHUANG WEI-WEI;EVANS DAVID R.;HSU SHENG TENG |
分类号 |
C01G27/00;C01G27/02;C23C16/40;H01L21/316;(IPC1-7):C01B21/48 |
主分类号 |
C01G27/00 |
代理机构 |
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地址 |
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