发明名称 Device for hybrid plasma processing
摘要 A device for hybrid plasma processing, particularly for deposition of thin films and for plasma treatment of samples, in a plasma reactor with pumping system characterized in that at least one feeder of microwave power ( 2 ) is installed in the plasma reactor ( 1 ) and connected to a microwave generator ( 3 ) for generation of a microwave plasma ( 4 ) in contact with at least one hollow cathode ( 5 ) in the plasma reactor, where the hollow cathode is powered from a cathode power generator ( 6 ). At least one inlet for a processing gas ( 7 ) is installed behind the hollow cathode and the gas is admitted into the plasma reactor through the hollow cathode where a hollow cathode plasma ( 9 ) is generated. A magnetic element ( 10 ) is used for generation of a perpendicular magnetic field ( 11 ) and/or a longitudinal magnetic field ( 12 ) at an outlet ( 13 ) from the hollow cathode.
申请公布号 US6899054(B1) 申请公布日期 2005.05.31
申请号 US20020130709 申请日期 2002.09.27
申请人 BARDOS LADISLAV;BARANKOVA HANA 发明人 BARDOS LADISLAV;BARANKOVA HANA
分类号 H05H1/46;B01J19/08;C23C16/517;H01J37/32;(IPC1-7):C23C16/00;H05H1/00;C23F1/00;H01L21/00 主分类号 H05H1/46
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