发明名称 |
Device for hybrid plasma processing |
摘要 |
A device for hybrid plasma processing, particularly for deposition of thin films and for plasma treatment of samples, in a plasma reactor with pumping system characterized in that at least one feeder of microwave power ( 2 ) is installed in the plasma reactor ( 1 ) and connected to a microwave generator ( 3 ) for generation of a microwave plasma ( 4 ) in contact with at least one hollow cathode ( 5 ) in the plasma reactor, where the hollow cathode is powered from a cathode power generator ( 6 ). At least one inlet for a processing gas ( 7 ) is installed behind the hollow cathode and the gas is admitted into the plasma reactor through the hollow cathode where a hollow cathode plasma ( 9 ) is generated. A magnetic element ( 10 ) is used for generation of a perpendicular magnetic field ( 11 ) and/or a longitudinal magnetic field ( 12 ) at an outlet ( 13 ) from the hollow cathode.
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申请公布号 |
US6899054(B1) |
申请公布日期 |
2005.05.31 |
申请号 |
US20020130709 |
申请日期 |
2002.09.27 |
申请人 |
BARDOS LADISLAV;BARANKOVA HANA |
发明人 |
BARDOS LADISLAV;BARANKOVA HANA |
分类号 |
H05H1/46;B01J19/08;C23C16/517;H01J37/32;(IPC1-7):C23C16/00;H05H1/00;C23F1/00;H01L21/00 |
主分类号 |
H05H1/46 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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