发明名称 |
Integrated structure effective to form a MOS component in a dielectrically insulated well |
摘要 |
The integrated structure and process is effective to form, in a dielectrically insulated well, a MOS component including respective drain and source regions of a first conductivity type as well as a gate region. The integrated structure includes a cut-off layer of the second conductivity type effective to surround only the source region. The cut-off layer is self-aligned by the gate region.
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申请公布号 |
US6900504(B2) |
申请公布日期 |
2005.05.31 |
申请号 |
US20030442646 |
申请日期 |
2003.05.21 |
申请人 |
STMICROELECTRONICS S.R.L. |
发明人 |
LEONARDI SALVATORE |
分类号 |
H01L21/762;H01L29/06;H01L29/10;H01L29/786;(IPC1-7):H01L31/039 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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