发明名称 |
Method of selective removal of SiGe alloys |
摘要 |
A method is disclosed of forming buried channel devices and surface channel devices on a heterostructure semiconductor substrate. In an embodiment, the method includes the steps of providing a structure including a first layer having a first oxidation rate disposed over a second layer having a second oxidation rate wherein the first oxidation rate is greater than the second oxidation rate, reacting said first layer to form a sacrificial layer, and removing said sacrificial layer to expose said second layer.
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申请公布号 |
US6900094(B2) |
申请公布日期 |
2005.05.31 |
申请号 |
US20020172542 |
申请日期 |
2002.06.14 |
申请人 |
AMBERWAVE SYSTEMS CORPORATION |
发明人 |
HAMMOND RICHARD;CURRIE MATTHEW |
分类号 |
H01L21/00;H01L21/31;H01L21/311;H01L21/316;H01L21/336;H01L21/469;H01L21/76;H01L21/8238;H01L21/8242;H01L21/8244;H01L29/10;H01L29/78;(IPC1-7):H01L21/824;H01L21/824 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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