| 摘要 |
A semiconductor memory device ( 1 ) comprises a normal RAM ( 2 ) and a redundancy RAM ( 3 ) provided independently from the normal RAM ( 2 ), serving as a redundancy circuit, and a control unit ( 4 ) for replacing a normal memory cell array of the normal RM ( 2 ) by a redundancy memory call array of the redundancy RAM ( 3 ). The control unit ( 4 ) can replace the normal memory cell array by some of a plurality of redundancy memory cells constituting the redundancy memory cell array. Therefore, a defective normal memory cell array can be replaced with using a redundancy memory cell which does not have a defect. As a result, a manufacturing yield of the semiconductor memory device ( 1 ) can be improved. With this constitution provided is a technique to improve the manufacturing yield of a semiconductor memory device which comprises a redundancy circuit.
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