发明名称 |
Semiconductor device group and method for fabricating the same, and semiconductor device and method for fabricating the same |
摘要 |
The semiconductor group comprises a first semiconductor device including a first design macro and a nonvolatile memory, and a second semiconductor device including a second design macro having identity with the first design macro and including no nonvolatile memory. The first design macro includes a first active region and a first device isolation region formed on a first semiconductor substrate. The second design macro includes a second active region and a second device isolation region formed on a second semiconductor substrate. A curvature radius of an upper end of the first active region in a cross section is larger than a curvature radius of an upper end of the second active region in a cross section. A difference in height between a surface of the first active region and a surface of the first device isolation region is larger than a difference in height between a surface of the second active region and a surface of the device isolation region.
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申请公布号 |
US2005110071(A1) |
申请公布日期 |
2005.05.26 |
申请号 |
US20040969240 |
申请日期 |
2004.10.21 |
申请人 |
EMA TAIJI;KOJIMA HIDEYUKI;ANEZAKI TORU;NAKAGAWA SHINICHI |
发明人 |
EMA TAIJI;KOJIMA HIDEYUKI;ANEZAKI TORU;NAKAGAWA SHINICHI |
分类号 |
H01L27/115;H01L21/8247;H01L27/10;H01L27/105;H01L29/76;(IPC1-7):H01L29/76 |
主分类号 |
H01L27/115 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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