发明名称 HIGH MOLECULAR COMPOUND AND POSITIVE RESIST MATERIAL, AND METHOD FOR FORMING PATTERN USING THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide a positive resist material having high resolution with sensitivity in the case exposed by high energy rays and little line edge roughness owing to suppression of swelling during development and leaving little residue after the development. <P>SOLUTION: The high molecular compound has at least a repeating unit expressed by following general formula (1a) and a repeating unit expressed by following general formula (1b) and/or a repeating unit expressed by following general formula (1c). The positive resist material is produced by blending the high molecular compound as a base resin. <P>COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005133066(A) 申请公布日期 2005.05.26
申请号 JP20040215907 申请日期 2004.07.23
申请人 SHIN ETSU CHEM CO LTD 发明人 HATAKEYAMA JUN;HARADA YUJI;KAWAI YOSHIO
分类号 G03F7/033;C08F220/18;G03F7/039;H01L21/027 主分类号 G03F7/033
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