发明名称 |
HIGH MOLECULAR COMPOUND AND POSITIVE RESIST MATERIAL, AND METHOD FOR FORMING PATTERN USING THE SAME |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a positive resist material having high resolution with sensitivity in the case exposed by high energy rays and little line edge roughness owing to suppression of swelling during development and leaving little residue after the development. <P>SOLUTION: The high molecular compound has at least a repeating unit expressed by following general formula (1a) and a repeating unit expressed by following general formula (1b) and/or a repeating unit expressed by following general formula (1c). The positive resist material is produced by blending the high molecular compound as a base resin. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
申请公布号 |
JP2005133066(A) |
申请公布日期 |
2005.05.26 |
申请号 |
JP20040215907 |
申请日期 |
2004.07.23 |
申请人 |
SHIN ETSU CHEM CO LTD |
发明人 |
HATAKEYAMA JUN;HARADA YUJI;KAWAI YOSHIO |
分类号 |
G03F7/033;C08F220/18;G03F7/039;H01L21/027 |
主分类号 |
G03F7/033 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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