| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To reduce an operation voltage, dissolve an instability of an emission current, reduce an operating temperature, thereby implementing high efficiency and long life time. <P>SOLUTION: A heat-resisting thin film 3 has a large energy band gap, an extremely small or negative electron affinity (NEA) and a small barrier to electrons at a plane contacting with a metal or a semiconductor. The heat-resisting thin film 3 is deposited on a conductive substrate A of a metal or a semiconductor. The heat-resisting thin film 3 is formed of a diamond or a diamond-like carbon thin film (DLC). The conductive substrate A is a piece of plate 1 having one side surface, such as an top surface or a bottom surface, on which the heat-resisting thin film 3 is deposited. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
