发明名称 Semiconductor device
摘要 A thin semiconductor device which assures a high production yield. The semiconductor device includes: first and second semiconductor chips each of which has electrodes over its first surface; first leads electrically connected with the electrodes of the first semiconductor chip through first bonding wires; second leads electrically connected with the electrodes of the second semiconductor chip through second bonding wires; a die pad with first and second surfaces opposite each other where the first semiconductor chip's first surface is bonded to the first surface and the second semiconductor chip's first surface is bonded to the second surface; and a resin sealer which seals the first and second semiconductor chips, inner portions of the first and second leads, the first and second bonding wires, and the die pad. The inner portions of the first and second leads and the die pad lie at the same height level in a thickness direction of the resin sealer.
申请公布号 US2005110127(A1) 申请公布日期 2005.05.26
申请号 US20040981489 申请日期 2004.11.05
申请人 RENESAS TECHNOLOGY CORP. 发明人 KANEMOTO KOUICHI;SUZUKI KAZUNARI;SHIOTSUKI TOSHIHIRO;SUGA HIDEYUKI
分类号 H01L25/18;H01L23/00;H01L23/12;H01L23/495;H01L25/065;H01L25/07;(IPC1-7):H01L29/423 主分类号 H01L25/18
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