| 摘要 |
PROBLEM TO BE SOLVED: To collectively form a silicide layer on a diffused layer and on a gate electrode while suppressing the cohesion of the silicide formed on the gate electrode. SOLUTION: A gate electrode 3, in which a mono-crystalline semiconductor layer 3b is stacked on a poly-crystalline semiconductor layer 3a, is formed on a single-crystal semiconductor substrate 1. Silicide layers 8a, 8b, and 8c are respectively formed on source/drain layers 6a, 6b and on the gate electrode 3 by making silicidation reactions occur with a metal layer 7. COPYRIGHT: (C)2005,JPO&NCIPI
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