| 摘要 |
PROBLEM TO BE SOLVED: To provide a cross-point type ferroelectric memory of high quality, wherein a memory cell array constituted of ferroelectric capacitors in the cross-point type ferroelectric memory in which lamination of a plurality of layers is performed, and memory cell array arranged in each layer via an interlayer insulator prevents noise from adjacent memory cell array. SOLUTION: In the cross point type ferroelectric memory 100, a first memory cell array 30 and a second memory cell array 60 are laminated via a first interlayer insulator 20 and a second interlayer insulator 50. The first memory cell array 30 includes a lower electrode 36 formed into a stripe shape, an upper electrode 38 formed in a stripe shape in a direction intersecting the lower electrode 36, a ferroelectric capacitor 34 arranged at the intersecting portion of the lower electrode 36 and the upper electrode 38, and an embedded insulation layer 32 formed between the ferroelectric capacitors 34. The first interlayer insulator 20 is provided with a conductive layer 22 between the first insulator 24 and the second insulator 26. COPYRIGHT: (C)2005,JPO&NCIPI
|
