发明名称 POWER SEMICONDUCTOR MODULE
摘要 <P>PROBLEM TO BE SOLVED: To provide a power semiconductor module that is high in reliability, can be reduced in size, and can be improved in cooling efficiency. <P>SOLUTION: The power semiconductor module, provided with a cooling jacket for heat radiation, comprises an insulating substrate having first and second surfaces facing each other, a power device mounted on the first surface of the substrate, and an elastic seal brought into contact with the substrate along the outer edge of the second surface. The module also comprises the cooling jacket, brought into contact with the elastic seal, in a state where the jacket is faced to the second surface of the substrate and a pressurizing member which pressurizes the substrate toward the cooling jacket. <P>COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005136133(A) 申请公布日期 2005.05.26
申请号 JP20030369985 申请日期 2003.10.30
申请人 MITSUBISHI ELECTRIC CORP 发明人 KIKUCHI MASAO
分类号 H01L23/473;H01L25/07;H01L25/18 主分类号 H01L23/473
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