发明名称 Non-voltatile memory cell techniques
摘要 A non-volatile memory cell ( 10 ) includes a charge-storing node ( 16 ). An electrically insulating first layer ( 76 ) is coupled between the node and a source of a first voltage ( 22 ). An electrically insulating second layer ( 66 ) is coupled between the node and a source of a second voltage ( 20 - 21 ). The area of the first layer is smaller than the area of the second layer. A controller ( 90 ) is arranged to cause the first voltage to be greater than the second voltage so that charge is extracted from the node and is arranged to cause the second voltage to be greater than the first voltage so that charge is injected into the node.
申请公布号 US2005111258(A1) 申请公布日期 2005.05.26
申请号 US20040984077 申请日期 2004.11.08
申请人 TERZIOGLU ESIN;AFGHAHI MORTEZA C.;WINOGRAD GIL I. 发明人 TERZIOGLU ESIN;AFGHAHI MORTEZA C.;WINOGRAD GIL I.
分类号 G11C16/04;(IPC1-7):G11C11/34 主分类号 G11C16/04
代理机构 代理人
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