| 摘要 |
PROBLEM TO BE SOLVED: To obtain a resist compsn. showing a good film remaining rate for the formation of a pattern, especially not a dense pattern of lines and spaces(L& S) but an isolated pattern, excellent development contrast between an exposed part and a part not exposed, and excellent resolution, latitude for exposure, focus depth characteristics and cross section. SOLUTION: This compsn. contains (A) an alkali-soluble resin, (B) a compd. containing quinone diazide groups, such as 2,4-bis[4-hydroxy-3-(4- hydroxybenzyl)-5-methylbenzyl]-6-cyclohexylphenol naphthoquinone diazide sulfonic acid ester and (C) halogenated sulfonic acid. |
