发明名称 |
METHOD OF MANUFACTURING A THIN FILM TRANSISTOR, THIN FILM TRANSISTOR, THIN FILM TRANSISTOR CIRCUIT, ELECTRONIC DEVICE, AND ELECTRONIC APPARATUS |
摘要 |
<p>The invention provides a method of manufacturing a thin film transistor capable of manufacturing a high-performance thin film transistor with a simple process, which comprises the steps of (i) forming a source electrode (3) and a drain electrode (4) on a substrate (2) by an electroless plating process, (ii) forming an organic semiconductor layer (5) in at least an area between the source electrode (3) and the drain electrode (4) using a coating method, (iii) forming a gate-insulating layer (6) on the organic semiconductor layer (5) using a coating method, and (iv) forming a gate electrode (7) using a coating method so as to overlap an area on the gate-insulating layer (6) and between the source electrode (3) and the drain electrode (4). <??>Also, the invention provides for a thin film transistor obtainable according to the above method, and a thin film transistor circuit, an electronic device, and an electronic apparatus each equipped with the thin film transistor. <IMAGE> <IMAGE></p> |
申请公布号 |
KR20050048463(A) |
申请公布日期 |
2005.05.24 |
申请号 |
KR20040080203 |
申请日期 |
2004.10.08 |
申请人 |
SEIKO EPSON CORPORATION |
发明人 |
FURIHATA, HIDEMICHI;HARADA, MITSUAKI;KAWASE, TAKEO;KIMURA, SATOSHI |
分类号 |
H01L21/28;C23C18/16;C23C18/18;C23C18/31;C25D3/00;G02F1/1368;G02F1/167;H01L21/20;H01L21/288;H01L21/336;H01L29/417;H01L29/423;H01L29/49;H01L29/786;H01L51/05;H01L51/40;(IPC1-7):H01L29/786 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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