Integrated ashing and implant annealing method

摘要

After ion implantation, thermal ashing is conducted in a high oxygen concentration at a pressure of between about 100 to about 760 Torr at below 700° C. to remove the resist. Since photoresist consists of Carbon (C), Hydrogen (H) and Oxygen (O), the products of reaction of the thermal oxidation of the photoresist include CO₂ and H₂O. Since the process includes a substantial amount of oxygen, the resist can be completely oxidized, thus leaving no residue or other contaminates to remain on the substrate.