发明名称 |
Group III nitride compound semiconductor device |
摘要 |
A titanium layer and a titanium nitride layer are successively laminated on a substrate and a group III nitride compound semiconductor layer is further formed thereon. When the titanium layer is removed in the condition that a sufficient film thickness is given to the titanium nitride layer, a device having the titanium nitride layer as a substrate is obtained.
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申请公布号 |
US6897139(B2) |
申请公布日期 |
2005.05.24 |
申请号 |
US20020297840 |
申请日期 |
2002.12.11 |
申请人 |
TOYODA GOSEI CO., LTD. |
发明人 |
SHIBATA NAOKI;SENDA MASANOBU |
分类号 |
H01L33/10;H01L21/20;H01L21/203;H01L21/306;H01L31/10;H01L33/12;H01L33/32;(IPC1-7):H01L21/28;H01L21/320 |
主分类号 |
H01L33/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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