| 摘要 |
PROBLEM TO BE SOLVED: To provide a hetero-field effect transistor which has improved electron mobility, thereby, realizing high speed operation, its manufacturing method, and a transceiver thereof. SOLUTION: The hetero-field effect transistor includes: an INP substrate 21; a channel layer 23 formed on the INP substrate via a buffer layer 22; a spacer layer 25a including a semiconductor having a band gap larger than that of the channel layer and formed so as to provide a hetero junction with the channel layer; and a carrier supply layer 26 formed so as to neighbor to the spacer layer, wherein the channel layer includes a layer of a compound semiconductor which is represented in chemical formula of Ga<SB>x</SB>In<SB>1-x</SB>N<SB>y</SB>A<SB>1-y</SB>, where A is As or Sb, the composition x is between 0 and 0.2, and the composition y is between 0.03 and 0.10. COPYRIGHT: (C)2005,JPO&NCIPI
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