发明名称 POWER SYNTHESIS TYPE HIGH-EFFICIENCY AMPLIFIER
摘要 PROBLEM TO BE SOLVED: To obtain a power synthesis type high-frequency amplifier, capable of attaining characteristics of high output, high efficiency and high gain, even in a condition in which input/output impedance is not open, when a peak power amplifying transistor is off. SOLUTION: A first branched line 3 and a second branched line 4 are connected in parallel between an input-side power-distributing means 1 and an output-side power-distributing means 2, a carrier power amplifying transistor 5 is connected to the line 3, and a peak power amplifying transistor 7 is connected to the line 4. A first 1/4 wavelength line 18 and a first input-matching circuit 19 are connected in series with the input side of the transistor 5. A first output-matching circuit 20 is connected to the output-side of the transistor 5. A second input-matching circuit 21 is connected to the input-side of the transistor 7. A second output-matching circuit 22 and a second 1/4 wavelength line 23 are connected in series with the output-side of the transistor 7. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005130013(A) 申请公布日期 2005.05.19
申请号 JP20030360639 申请日期 2003.10.21
申请人 SHIMADA PHYS & CHEM IND CO LTD;MITSUBISHI ELECTRIC CORP 发明人 MARUYAMA HIROSHI;IWASAKI TAKASHI;OGAWA KAZUYOSHI;MIYADERA NOBUO;IKEDA YUKIO;NAKAYAMA MASATOSHI;HORIGUCHI KENICHI
分类号 H03F3/60;H03F1/02;H03F1/07;H03F3/68;(IPC1-7):H03F3/60 主分类号 H03F3/60
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