发明名称 |
MULTILAYER SEMICONDUCTOR STRUCTURE WITH PHOSPHIDE-PASSIVATED GERMANIUM SUBSTRATE |
摘要 |
<p>A multilayer semiconductor structure includes a germanium substrate having a first surface. The germanium substrate has two regions, a bulk p-type germanium region, and a phosphorus-doped n-type germanium region adjacent to the first surface. A layer of a phosphide material overlies and contacts the first surface of the germanium substrate. A layer of gallium arsenide overlies and contacts the layer of the phosphide material, and electrical contacts may be added to form a solar cell. Additional photovoltaic junctions may be added to form multijunction solar cells. The solar cells may be assembled together to form solar panels.</p> |
申请公布号 |
WO0059045(A3) |
申请公布日期 |
2001.01.04 |
申请号 |
WO2000US07402 |
申请日期 |
2000.03.20 |
申请人 |
HUGHES ELECTRONICS CORPORATION |
发明人 |
ERMER, JAMES, H.;CAI, LI;HADDAD, MORAN;CAVICCHI, BRUCE, T.;KARAM, NASSER, H. |
分类号 |
C23C16/30;H01L21/205;H01L29/267;H01L31/04;H01L31/0687;H01L31/18;(IPC1-7):H01L31/072;H01L31/078;H01L31/042 |
主分类号 |
C23C16/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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