DIELECTRIC MEMORY ELEMENT

摘要

A highly reliable dielectric memory element capable of high density recording in which diffusion of polarized memory area and fatigue abrasion due to aging are retarded to ensure long term use. The dielectric memory element comprises a conductive buffer layer (3) formed on a substrate (2) while being oriented in the direction of the c-axis, a piezoelectric single crystal thin film (4) formed on the buffer layer (3) while having an orientation of (001). A memory area (4a) being polarized in the thickness direction is formed in the piezoelectric single crystal thin film (4) such that the direction of polarization is read out according to the variation in capacitance when a voltage is applied which is dependent on the direction of polarization in the memory area (4a).