| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a transfer mask data correction system to obtain a transfer mask suitable to eliminate the troubles caused by the physical phenomenon which follows the etching or ion implantation and the electron beam lithography when manufacturing a mask pattern. <P>SOLUTION: A 2-dimensional distribution image DP of the occupation rates is acquired in every step (S1), and Fourier transformed to the 2-dimensional distribution image DP (S2). Then, the components small in the spatial frequency are picked up (S3) by applying space filtering to the 2-dimensional Fourier image to pass only the small components. Then, the 2-dimensional distribution image DPX of the occupation rates is acquired by inverse Fourier transforming the 2-dimensional Fourier image (S4). And by calculating the offset distribution after the dry etching which uses the microloading effect (S5) and oversizing or under sizing the acquired design data according to the offset distribution, the design data after the correction is acquired (S6). <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
