| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma etching device which can significantly reduce the yield of the production immediately after the use of a new plasma etching electrode has started, and to provide an evaluation method which can choose exactly the plasma etching electrode which can prevent metal contamination of a silicon wafer to raise the yield of the production of a semiconductor integrated circuit, and especially is able to significantly reduce the yield of the production, immediately after the use of the new plasma etching electrode has started. SOLUTION: The plasma etching electrode 6 is formed into a structure, wherein a part which is consumed with plasma consists of a glassy carbon containing Fe with concentration of 1×10<SP>3</SP>counts or less as measured by secondary ion mass spectrometry. The evaluation method of the plasma etching electrode is such that the evaluation of the plasma etching device having the plasma etching electrode 6 and the plasma etching electrode made of the glassy carbon, is made by measuring the Fe concentration by the secondary ion mass spectrometry. COPYRIGHT: (C)2005,JPO&NCIPI
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