| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve heat dissipation and high-frequency properties of a semiconductor device. <P>SOLUTION: A semiconductor device 100 comprises a first conductive film 102 and a second conductive film 104 which are provided on both sides of an insulating resin film 106. A circuit element 120 is placed on the second conductive film 104. The circuit element 120 is electrically connected to the second conductive film 104. The second conductive film 104 is provided to cover a via plug 110. The via plug 110 is formed such that its diameter tapers from the first conductive film 102 toward the second conductive film 104. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
