| 摘要 |
PROBLEM TO BE SOLVED: To provide high-quality, high-performance single crystal SiC which has high smoothness and forms few micropipe defect, interface defect, etc., by controlling the film thickness of the single crystal SiC at growth. SOLUTION: A single crystal SiC substrate 5, a C atom-supplying substrate 17 which is for supplying carbon atoms and is stacked on the substrate 5 and a sealed vessel housing the single crystal SiC substrate 5 and the C atom-supplying substrate 17 are heat-treated to interpose a metallic Si melt layer 18 between the single crystal SiC substrate 5 and the C atom-supplying substrate 17 and grow the single crystal on the single crystal SiC substrate 5 through liquid phase epitaxial growth. As an Si material source for the metallic Si melt layer 18, a metallic Si film with a thickness of about 50-200μm is formed on the single crystal SiC substrate through vapor phase deposition, or a metallic Si plate of a similar thickness is stacked on the substrate to control the thickness of the metallic Si melt layer 18. Alternatively, the thickness of the metallic Si melt layer 18 can be controlled by placing a spacer 19 of a prescribed thickness between the single crystal SiC substrate 5 and the C atom-supplying substrate 17. COPYRIGHT: (C)2005,JPO&NCIPI
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