发明名称 |
TRI-METAL AND DUAL-METAL STACKED INDUCTORS |
摘要 |
A high performance inductor which has a relatively low sheet resistance that can be integrated within a semiconductor interconnect structure and can be used in RF applications, including RF CMOS and SiGe technologies, is provided. The inductor is either a dual-metal inductor including a first layer of metal which serves as an upper metal wire in the semiconductor structure and a second layer of metal located directly on top of the first layer of metal, or a tri metal inductor, which includes a third layer of metal located directly on top of the second layer of metal. No vias are located between the various metal layers of the inventive inductor.
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申请公布号 |
US2005104157(A1) |
申请公布日期 |
2005.05.19 |
申请号 |
US20030707065 |
申请日期 |
2003.11.19 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
COOLBAUGH DOUGLAS D.;EDELSTEIN DANIEL C.;GROVES ROBERT A.;HE ZHONG-XIANG |
分类号 |
H01L21/02;H01L23/522;H01L23/528;(IPC1-7):H01L29/00 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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