| 摘要 |
A solid-state image sensor of the present invention has a plurality of pixel cells that generate signal charges in accordance with incident light. It is characterized by having a gettering region within the area of a pixel cell. The gettering region, which is disposed closely to the photoelectrical conversion layer, makes direct and efficient use of gettering capability in the pixel region in the solid-state image sensor. As a result, it is possible to effectively eliminate metal contaminant contained in the pixel region, thereby remarkably reducing dark outputs occurring from the metal contaminant.
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