发明名称 |
Dram access transistor and method of formation |
摘要 |
Self-aligned recessed gate structures and method of formation are disclosed. Field oxide area for isolation are first formed in a semiconductor substrate. A plurality of columns are defined in an insulating layer formed over the semiconductor substrate subsequent to which a thin sacrificial oxide layer is formed over exposed regions of the semiconductor substrate but not over the field oxide areas. A dielectric material is then provided on sidewalls of each column and over portions of the sacrificial oxide layer and of the field oxide areas. A first etch is conducted to form a first set of trenches within the semiconductor substrate and a plurality of recesses within the field oxide areas. A second etch is conducted to remove dielectric residue remaining on the sidewalls of the columns and to form a second set of trenches. Polysilicon is then deposited within the second set of trenches and within the recesses to form recessed conductive gates.
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申请公布号 |
US2005106820(A1) |
申请公布日期 |
2005.05.19 |
申请号 |
US20040000003 |
申请日期 |
2004.12.01 |
申请人 |
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发明人 |
TRAN LUAN C. |
分类号 |
H01L21/336;H01L21/8234;H01L21/8242;H01L27/108;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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