| 摘要 |
<p>PROBLEM TO BE SOLVED: To improve the design accuracy of a semiconductor device by representing a min. value of reflection coefficient with a min. value of specified component in a determinant of the reflection coefficient, obtaining a complex energy value when this min. value is taken, and determining the energy level of a semiconductor hetero- structure and spread width of this level from the real and imaginary parts of the complex energy value. SOLUTION: Based on the condition M12(E)=0, a complex energy meeting this condition is searched, using the Newton-Raphson method, i.e., the energy analyzing domain including a quantum well structure is divided in small domains, a transfer matrix is defined at each domain and used for representing the min. value of the reflection coefficient with min. value of the (1, 2) element M12 or (2, 1) element M21 in the determinant of the reflection coefficient the complex energy value is obtd. when this min. value is taken, and the energy level of a semiconductor hetero-structure and spread width of this level are determined from the real and imaginary parts of the complex energy value wherein the energy is rapidly reduced until a quantity 8, the key of the final soln. research, becomes small within an allowable error.</p> |
