| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor photo detector and light receiving module which can be applied with sufficient bias voltage even when a strong optical signal is inputted, is stable and is reduced in noise. SOLUTION: The semiconductor photo detector is such that a photo diode 51 for converting an optical signal to an electric signal and a resistance element 53 inserted in series to the photo diode 51 are integrated together, and is equipped with a bypass diode 52 connected in parallel to the resistance element 53. The photo diode 51 has a multilayer structure wherein an n<SP>+</SP>-InGaAs layer, an i-InGaAs layer, and a p<SP>+</SP>-InGaAs layer are laminated in order on an InP substrate. The bypass diode 52 has the same multilayer structure, and is simultaneously formed in a manufacturing process of the photo diode 51. The resistance element 53 or a capacitive element 54 is integrally formed on the InP substrate. COPYRIGHT: (C)2005,JPO&NCIPI
|
