| 摘要 |
PROBLEM TO BE SOLVED: To form contact between selecting transistors in a self-alignment manner by a simple process, in a floating gate type nonvolatile storage device having the selecting transistors. SOLUTION: A selecting gate electrode (12) and a dummy gate electrode (2) are electrically insulated by a first insulating film (13) between electrodes. The sidewall (18) of the first insulating film (13) is constituted of an insulating film turning to an etching stopper film when a hole for contact is formed by etching and eliminating an insulating film between metal formed in a first layer metal wiring lower part. When a first contact (6) and at least one of two dummy gate electrodes (2) which arranged adjacently in the column direction on both sides of the first contact (6) are connected electrically, insurance of electrical insulation between the first contact (6) and the selecting gate electrode (12) is made possible, so that the first contact (6) is connected in a self-alignment manner with a first diffusion layer (5). COPYRIGHT: (C)2005,JPO&NCIPI
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