发明名称 |
High temperature electronic devices |
摘要 |
In at least some embodiments, electronic devices suitable for use at temperatures in excess of 200 C. may comprise an integrated circuit fabricated on a silicon carbide substrate, and a thick passivation layer. In other embodiments, electronic devices suitable for use at temperatures in excess of 200 C. may comprise an integrated circuit formed from silicon located on a sapphire substrate, and a thick passivation layer. The electronic devices may be implemented in the context of hydrocarbon drilling and production operations. |
申请公布号 |
US2005104176(A1) |
申请公布日期 |
2005.05.19 |
申请号 |
US20040992145 |
申请日期 |
2004.11.18 |
申请人 |
HALLIBURTON ENERGY SERVICES, INC. |
发明人 |
RODNEY PAUL F.;MASINO JAMES E.;GOLLA CHRISTOPHER A.;SCHULTZ ROGER L.;FREEMAN JAMES J. |
分类号 |
B81B7/00;E21B;E21B7/00;E21B45/00;E21B47/12;G01V;G01V3/08;H01L;H01L21/86;H01L23/02;H01L27/12;H01Q;(IPC1-7):H01L23/02 |
主分类号 |
B81B7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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