MAGNETIC TUNNELING JUNCTION CELL COMPRISING FREE MAGNETIC LAYER HAVING LOW MAGNETIC MOMENT AND MAGNETIC RANDOM ACCESS MEMORY COMPRISING THE SAME,申请号KR20030080573-传众专利搜索

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发明名称	MAGNETIC TUNNELING JUNCTION CELL COMPRISING FREE MAGNETIC LAYER HAVING LOW MAGNETIC MOMENT AND MAGNETIC RANDOM ACCESS MEMORY COMPRISING THE SAME
摘要
申请公布号	KR20050046948(A)	申请公布日期	2005.05.19
申请号	KR20030080573	申请日期	2003.11.14
申请人	SAMSUNG ELECTRONICS CO., LTD.	发明人	HWANG, IN JUN;KIM, TAE WAN;PARK, SANG JIN
分类号	H01L27/105;G11C11/15;G11C11/16;H01F10/13;H01F10/32;H01L21/8246;H01L43/08;(IPC1-7):G11C11/15	主分类号	H01L27/105
代理机构		代理人
主权项
地址

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