| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light receiving element which is excellent in high-speed response characteristics and capable of appropriately detecting light. SOLUTION: The semiconductor light receiving element PD1 is equipped with a light receiving part 11, a first pad electrode arrangement part 21, and a second pad electrode arrangement part 31. The light receiving part 11 includes a high-concentration carrier layer 3a which is so formed as to have a stepped part together with a light absorbing layer 5a, excluding the vicinity of the first pad electrode arrangement part 21. A contact electrode 17 is arranged on the stepped part 4 of the high-concentration carrier layer 3a. A second pad electrode 33 is arranged on a passivation film 19 on the top of the second pad electrode arrangement 31. The contact electrode 17 is connected to one end of a second wiring electrode 45 through a contact hole 19a bored in the passivation film 19, and the second pad electrode 33 is connected to the other end of the second wiring electrode 45. By this setup, the high-concentration carrier layer 3a is electrically connected to the second pad electrode 33 through the contact electrode 17 and the second wiring electrode 45. COPYRIGHT: (C)2005,JPO&NCIPI
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