| 摘要 |
A method for fabricating an RF enhancement mode FET ( 30 ) having improved gate properties is provided. The method comprises the steps of providing ( 131 ) a substrate ( 31 ) having a stack of semiconductor layers ( 32-35 ) formed thereon, the stack including a cap layer ( 35 ) and a central layer ( 33 ) defining a device channel, forming ( 103 ) a photoresist pattern ( 58 ) over the cap layer, thereby defining a masked region and an unmasked region, and, in any order, (a) creating ( 105 ) an implant region ( 36, 37 ) in the unmasked region, and (b) removing ( 107 ) the cap layer from the unmasked region. By forming the implant region and cap region with no overlap, a device with low current leakage may be achieved.
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