| 发明名称 |
Fabrication of low resistance, non-alloyed, ohmic contacts to InP using non-stoichiometric InP layers |
| 摘要 |
A method of reducing the specific contact resistivity of a metal to semiconductor interface between a metal contact and an InP semiconductor compound. The method includes the step of increasing the amount of the group V element (P) in the semiconductor compound so that the semiconductor compound is non-stoichiometric having an excess concentration of the group V element in an amount of at least 0.1% above stoichiometric levels.
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| 申请公布号 |
US6894325(B2) |
申请公布日期 |
2005.05.17 |
| 申请号 |
US20030453173 |
申请日期 |
2003.06.03 |
| 申请人 |
HRL LABORATORIES, LLC |
发明人 |
MICOVIC MIROSLAV;DOCTER DANIEL P. |
| 分类号 |
H01L21/28;H01L21/285;H01L21/331;H01L21/338;H01L29/45;H01L29/737;H01L29/778;H01L29/812;(IPC1-7):H01L31/072;H01L31/109 |
主分类号 |
H01L21/28 |
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