Semiconductor optical amplifier

摘要

The invention relates to a semiconductor optical amplifier including a buried guide active structure ( 12 ), characterized in that the guide active structure ( 12 ) is subjected to an external stress to render the gain of said amplifier insensitive to the polarization of the light to be amplified, said external stress coming from a force induced by a deposit of a material ( 50 ) against a ridge ( 15 ) surrounding said guide active structure ( 12 ).