| 发明名称 |
Bipolar junction transistor with a counterdoped collector region |
| 摘要 |
An improved BJT is described that maximizes both Bvceo and Ft/Fmax for optimum performance. Scattering centers are introduced in the collector region ( 80 ) of the BJT to improve Bvceo. The inclusion of the scattering centers allows the width of the collector region W<SUB>CD </SUB>( 90 ) to be reduced leading to an improvement in Ft/Fmax.
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| 申请公布号 |
US6894366(B2) |
申请公布日期 |
2005.05.17 |
| 申请号 |
US20010967187 |
申请日期 |
2001.09.28 |
| 申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
HOWARD GREGORY E.;BABCOCK JEFFREY;PINTO ANGELO;BALSTER SCOTT |
| 分类号 |
H01L21/331;H01L29/08;H01L29/32;H01L29/732;(IPC1-7):H01L27/082;H01L27/102;H01L29/70;H01L31/11 |
主分类号 |
H01L21/331 |
| 代理机构 |
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